Wafer curvature measurements are used to quantify residual and thermal stress in thin films by tracking substrate curvature before and after deposition or thermal processing. This technique enables evaluation of stress evolution, adhesion, and mechanical stability of thin-film systems.
Image Source: (Captured by me, Balk Lab, University of Kentucky)
I used wafer curvature measurements on compliant substrates to evaluate intrinsic stress development during thin-film deposition. By correlating curvature changes with sputtering pressure and deposition conditions, I identified processing windows that minimized residual stress. This optimization improved film adhesion and mechanical stability. .
I quantified residual stresses in thin films deposited with different compositions and processing histories using wafer curvature analysis. Consistent measurement protocols enabled meaningful comparison of stress states between equiatomic and non-equiatomic alloy films. Stress control ensured reliable interpretation of mechanical and corrosion test results.
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